Nano-artifact metrics based on random collapse of resist

Artifact metrics is an information security technology that uses the intrinsic characteristics of a physical object for authentication and clone resistance. Here, we demonstrate nano-artifact metrics based on silicon nanostructures formed via an array of resist pillars that randomly collapse when exposed to electron-beam lithography. The proposed technique uses conventional and scalable lithography processes, and because of the random collapse of resist, the resultant structure has extremely fine-scale morphology with a minimum dimension below 10 nm, which is less than the resolution of current lithography capabilities. By evaluating false match, false non-match and clone-resistance rates, we clarify that the nanostructured patterns based on resist collapse satisfy the requirements for high-performance security applications

Unidirectional light propagation through two-layer nanostructures based on optical near-field interactions

We theoretically demonstrate direction-dependent polarization conversion efficiency, yielding unidirectional light transmission, through a two-layer nanostructure by using the angular spectrum representation of optical near-fields. The theory provides results that are consistent with electromagnetic numerical simulations. This study reveals that optical near-field interactions among nanostructured matter can provide unique optical properties, such as the unidirectionality observed here, and offers fundamental guiding principles for understanding and engineering nanostructures for realizing novel functionalities

Optical near-field-mediated polarization asymmetry induced by two-layer nanostructures

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